Title :
First principle theory for cavity solitons in semiconductor microresonators
Author :
Brambilla, M. ; Maggipinto, T. ; Rizzi, Francesco ; Spinelli, Larissa ; Tissoni, G. ; Lugiato, L.A.
Author_Institution :
INFM, Univ. e Politecnico, Bari, Italy
Abstract :
Summary form only given. Cavity solitons are similar to spatial solitons but arise in dissipative systems, which bestows them special properties. They are generated by shining short and narrow laser pulses into resonant cavities filled with nonlinear samples of large section, and driven by a cw coherent holding beam. The cavity soliton, which appears as a bright spot in the transverse intensity profile, persists after the passage of the pulse, until it is switched off by another pulse. This talk will present the recent progress in the theoretical numerical studies of cavity solitons in semiconductor microresonators, following the development of more refined models to adequately describe the complex physics of broad-area semiconductor microresonators. In particular, a microscopic model is discussed to describe the nonlinear response (via the complex susceptibility) of a multiple quantum well sample.
Keywords :
micro-optics; micromechanical resonators; optical solitons; semiconductor quantum wells; bright spot; broad-area semiconductor microresonators; cavity soliton; cavity soliton motion; complex susceptibility; cw coherent holding beam; dissipative systems; first principle theory; microscopic model; multiple quantum well sample; nonlinear response; nonlinear samples; resonant cavities; semiconductor microresonators; short narrow laser pulse irradiation; spatial solitons; transverse intensity profile; Intensity modulation; Laser beams; Laser theory; Microcavities; Motion analysis; Optical pulse generation; Optimized production technology; Pulse modulation; Semiconductor lasers; Solitons;
Conference_Titel :
Quantum Electronics Conference, 2000. Conference Digest. 2000 International
Conference_Location :
Nice, France
Print_ISBN :
0-7803-6318-3
DOI :
10.1109/IQEC.2000.907781