DocumentCode :
2935411
Title :
Magneto-Transport Properties of Nonmagnetic Doped (Zn,Mn) O Dilute Magnetic Semiconductor
Author :
Ghosh, K.C. ; Mundada, G. ; Manchiraju, S. ; Kehl, T. ; Vera, C. ; Patel, R.J. ; Ishiaho, D. ; Mishra, S.R. ; Kahol, P.
Author_Institution :
Missouri State Univ., Springfield
fYear :
2006
fDate :
8-12 May 2006
Firstpage :
138
Lastpage :
138
Abstract :
In this paper, nonmagnetic elements (Al and Cu) doping effect on the structural and magneto-transport properties of Zn0.85Mn0.15O (ZnMnO) dilute magnetic semiconductors were reported. The structural characterization was performed using XRD, Raman spectroscopy, AFM and SEM. Temperature dependent electrical resistivity, Hall effect, and were carried out using a standard magneto-transport set-up.
Keywords :
Hall effect; Raman spectra; X-ray diffraction; aluminium; atomic force microscopy; copper; ferromagnetic materials; magnetic epitaxial layers; magnetoresistance; manganese compounds; scanning electron microscopy; semiconductor doping; semiconductor epitaxial layers; semimagnetic semiconductors; zinc compounds; AFM; Hall effect; Raman spectroscopy; SEM; XRD; Zn0.80Al0.05Mn0.15O; Zn0.80Cu0.05Mn0.15O; ZnMnO; doping effect; electrical resistivity; epitaxial thin films; magneto-transport properties; magnetoresistance; nonmagnetic doped dilute magnetic semiconductor; nonmagnetic elements; Electric resistance; Hall effect; Magnetic properties; Magnetic semiconductors; Raman scattering; Semiconductor device doping; Spectroscopy; Temperature dependence; X-ray scattering; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
Type :
conf
DOI :
10.1109/INTMAG.2006.375638
Filename :
4261572
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2935411
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