• DocumentCode
    2935411
  • Title

    Magneto-Transport Properties of Nonmagnetic Doped (Zn,Mn) O Dilute Magnetic Semiconductor

  • Author

    Ghosh, K.C. ; Mundada, G. ; Manchiraju, S. ; Kehl, T. ; Vera, C. ; Patel, R.J. ; Ishiaho, D. ; Mishra, S.R. ; Kahol, P.

  • Author_Institution
    Missouri State Univ., Springfield
  • fYear
    2006
  • fDate
    8-12 May 2006
  • Firstpage
    138
  • Lastpage
    138
  • Abstract
    In this paper, nonmagnetic elements (Al and Cu) doping effect on the structural and magneto-transport properties of Zn0.85Mn0.15O (ZnMnO) dilute magnetic semiconductors were reported. The structural characterization was performed using XRD, Raman spectroscopy, AFM and SEM. Temperature dependent electrical resistivity, Hall effect, and were carried out using a standard magneto-transport set-up.
  • Keywords
    Hall effect; Raman spectra; X-ray diffraction; aluminium; atomic force microscopy; copper; ferromagnetic materials; magnetic epitaxial layers; magnetoresistance; manganese compounds; scanning electron microscopy; semiconductor doping; semiconductor epitaxial layers; semimagnetic semiconductors; zinc compounds; AFM; Hall effect; Raman spectroscopy; SEM; XRD; Zn0.80Al0.05Mn0.15O; Zn0.80Cu0.05Mn0.15O; ZnMnO; doping effect; electrical resistivity; epitaxial thin films; magneto-transport properties; magnetoresistance; nonmagnetic doped dilute magnetic semiconductor; nonmagnetic elements; Electric resistance; Hall effect; Magnetic properties; Magnetic semiconductors; Raman scattering; Semiconductor device doping; Spectroscopy; Temperature dependence; X-ray scattering; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2006. INTERMAG 2006. IEEE International
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    1-4244-1479-2
  • Type

    conf

  • DOI
    10.1109/INTMAG.2006.375638
  • Filename
    4261572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2935411