• DocumentCode
    2935592
  • Title

    Preparation and Characterization of Zn0.96Mn0.04O film on Si (100) with a high Tc.

  • Author

    Park, S. ; Kim, P. ; Lee, Y. ; Kim, T. ; Kang, J.

  • Author_Institution
    Hanyang Univ., Seoul
  • fYear
    2006
  • fDate
    8-12 May 2006
  • Firstpage
    146
  • Lastpage
    146
  • Abstract
    In this study, we report the preparation of a high-textured Zn0.96Mn0.04O1-delta film with a high TC where delta is the oxygen vacancy, by UHV reactive co-sputtering onto a natively oxidized Si (100) wafer, and the dependence of magnetism on the oxygen vacancy, controlled by the oxygen partial pressure (PO 2) during growth.
  • Keywords
    Curie temperature; II-VI semiconductors; manganese compounds; semiconductor thin films; semimagnetic semiconductors; sputter deposition; vacancies (crystal); zinc compounds; Si; UHV reactive co-sputtering; Zn0.96Mn0.04O; high temperature; high-textured film; materials preparation; oxygen partial pressure; oxygen vacancy; Magnetic field measurement; Magnetic films; Magnetic semiconductors; Physics; Rough surfaces; Semiconductor films; Superconducting magnets; Surface roughness; Temperature sensors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2006. INTERMAG 2006. IEEE International
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    1-4244-1479-2
  • Type

    conf

  • DOI
    10.1109/INTMAG.2006.375646
  • Filename
    4261580
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2935592