DocumentCode
2935633
Title
Low noise single electron transistors of stacked design
Author
Krupenin, V.A. ; Presnov, D.E. ; Savvateev, M.N. ; Scherer, H. ; Zorin, A.B. ; Niemeyer, J.
Author_Institution
Dept. of Cryoelectron., Moscow State Univ., Russia
fYear
1998
fDate
6-10 July 1998
Firstpage
140
Lastpage
141
Abstract
Overlap-type single-electron transistors with the different island to substrate contact areas were studied. We found that background charge noise reduces with the contact area reduction, that clearly indicates to the substrate origin of the noise. For transistors with the smallest contact area with the substrate (stacked configuration), we reached the noise level of 2.5.10/sup -5/ e//spl radic/Hz at 10 Hz, which is the lowest noise figure of SET devices measured so far.
Keywords
1/f noise; MIM devices; electrometers; electron device noise; single electron transistors; 1/f noise; 10 Hz; MIM tunnel junctions; background charge noise; contact area reduction; different island/substrate contact areas; electrometer; equivalent circuit; low noise; overlap-type single-electron transistors; stacked design; Acoustical engineering; Background noise; Circuit noise; Fluctuations; Low-frequency noise; Noise measurement; Noise reduction; Single electron transistors; Substrates; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 1998 Conference on
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-5018-9
Type
conf
DOI
10.1109/CPEM.1998.699824
Filename
699824
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