Electromganetic field control of electron spin magnetic resonance frequency in silicon donors for solid-state quantum computing

Author

Mirzaei, Hamidreza ; Hui, Hon Tat

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

fYear

2011

fDate

3-8 July 2011

Firstpage

1601

Lastpage

1604

Abstract

The electron-spin magnetic resonance frequency of an electron-spin qubit structure proposed for the realization of a quantum computer is rigorously determined by a numerical method. The potential distribution inside the silicon qubit structure is accurately calculated by an electromagnetic simulation method and the perturbation theory to the second order is formulated to obtain the magnetic resonance frequency of the phosphorus donor electron spin.

Keywords

elemental semiconductors; numerical analysis; paramagnetic resonance; perturbation theory; phosphorus; quantum computing; silicon; Si:P; electromagnetic field control; electromagnetic simulation; electron spin magnetic resonance frequency; electron-spin qubit structure; numerical method; perturbation theory; phosphorus donor electron spin; potential distribution; silicon qubit structure; solid-state quantum computing; Computers; Logic gates; Magnetic fields; Magnetic resonance; Quantum computing; Silicon; Quantum theory; nuclear magnetic resonance; perturbation methods;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation (APSURSI), 2011 IEEE International Symposium on

Conference_Location

Spokane, WA

ISSN

1522-3965

Print_ISBN

978-1-4244-9562-7

Type

conf

DOI

10.1109/APS.2011.5996607

Filename

5996607