Modeling and simulation of logic circuits using CNFETs and interconnects

Author

Abiri, Ebrahim ; Salehi, Mohammad Reza ; Mehrjoo, Zahra

Author_Institution

Dept. of Electr. & Electron. Eng., Shiraz Univ. of Technol., Shiraz, Iran

Volume

1

fYear

2010

fDate

1-2 Aug. 2010

Firstpage

51

Lastpage

55

Abstract

In this paper a new RLC model of a CNFET is presented. The S parameter formulation and analysis is utilized to investigate this two port model for drain to source signal transmission. The characteristic of the new topology is that using CNT interconnects instead of metallic ones, makes the model comfortable to be used in structures with more than one transistor connected to each other like VLSI circuits. Some logic circuits are simulated due to this approach in the end. All simulations are done in software “ADS 2008”.

Keywords

S-parameters; carbon nanotubes; circuit simulation; field effect transistors; interconnections; logic circuits; logic design; ADS software; C; CNFET; CNT interconnects; RLC model; S parameter formulation; VLSI circuits; logic circuit simulation; source signal transmission; transistor; Artificial intelligence; FETs; Stability analysis; Substrates; Wire; Carbon Nanotube FETS; RLC model; S parameters; logic circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits,Communications and System (PACCS), 2010 Second Pacific-Asia Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-7969-6

Type

conf

DOI

10.1109/PACCS.2010.5627019

Filename

5627019