DocumentCode :
2936231
Title :
Low loss limits in materials at the near millimeter range
Author :
Garin, B.M.
Author_Institution :
Inst. of Radio Eng. & Electron., Acad. of Sci., Moscow, Russia
fYear :
1996
fDate :
12-15 Aug 1996
Firstpage :
311
Lastpage :
314
Abstract :
Theoretical estimations have been obtained for the absolute values of the dielectric loss lower limits due to the free charge carriers and crystal lattice mechanisms in specific materials where the least loss is expected: in diamond-type crystals (Ge, Si and diamond), cubic crystals of AIIIBV type and some hexagonal crystals
Keywords :
III-V semiconductors; diamond; dielectric losses; elemental semiconductors; germanium; high-frequency effects; millimetre wave spectra; silicon; C; Ge; III-V type crystals; Si; crystal lattice mechanisms; cubic crystals; diamond; diamond-type crystals; dielectric loss lower limits; free carriers; hexagonal crystals; low loss limits; near millimeter range; Crystalline materials; Crystals; Dielectric losses; Estimation theory; Impurities; Indium phosphide; Phonons; Silicon carbide; Temperature dependence; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Millimeter Wave and Far Infrared Science and Technology, 1996. Proceedings., 4TH International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3619-4
Type :
conf
DOI :
10.1109/ICMWFT.1996.574886
Filename :
574886
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2936231
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