Title :
Monolithic GaAs and InP based frequency multiplier arrays
Author :
Qin, Xiaohui ; Shu, S. ; Liao, J.Y. ; Liu, H. X L ; Domier, C.W. ; Luhmann, N.C., Jr.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
Monolithic GaAs and InP based frequency multiplier arrays containing thousands of devices have been successfully fabricated for use in quasi-optical millimeter-wave systems. Monolithic frequency multiplier arrays have produced frequency doubled power levels of 2.1 W at 66 GHz, and frequency tripled power levels of 5.0 W at 99 GHz, with high efficiencies. New approaches for increasing the efficiency and power handling capabilities of the arrays are described
Keywords :
III-V semiconductors; MIMIC; frequency multipliers; gallium arsenide; indium compounds; millimetre wave frequency convertors; 2.1 W; 5 W; 66 GHz; 99 GHz; EHF; GaAs; InP; MIMIC; MM-wave IC; frequency multiplier arrays; monolithic arrays; power handling capabilities; quasi-optical millimeter-wave systems; Fabrication; Frequency; Frequency conversion; Gallium arsenide; Indium phosphide; Millimeter wave devices; Power generation; Schottky diodes; Solid state circuits; Space charge; Varactors;
Conference_Titel :
Microwave Conference Proceedings, 1993. APMC '93., 1993 Asia-Pacific
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-1352-6
DOI :
10.1109/APMC.1993.468470
