Palladium pre-plated copper leadframe for DRAM LOC packages

Author

Yang, Ji-Cheng ; Lee, Kian-Chai ; Tan, Ah-Chin

Author_Institution

Micron Semicond. Asia Pte Ltd., Singapore

fYear

1999

fDate

1999

Firstpage

842

Lastpage

847

Abstract

Though palladium (Pd) pre-plated copper (Cu) leadframe has been used in the packaging of logic and linear devices since its introduction in 1989, it still has not found its place in DRAM devices due to the lack of market acceptance and the difficulties copper leadframe poses to TSOP LOC packages. However, the requirements for improved heat dissipation of the new generation DRAM products have driven the need to explore the use of copper leadframe as a replacement for alloy 42 material. Copper with a thermal conductivity of 10x greater than alloy 42 has the potential to be an effective and cost effective method of enhancing thermal dissipation. This paper summarizes the findings of the development of Pd-Cu leadframe technology for DRAM LOC type TSOP. These include package and solder joint reliability, solderability, warpage control and impact on thermal impedance

Keywords

DRAM chips; cooling; copper; deformation; integrated circuit packaging; integrated circuit reliability; lead bonding; palladium; soldering; thermal conductivity; thermal management (packaging); DRAM LOC packages; Pd pre-plated Cu leadframe; Pd-Cu; Pd-Cu leadframe technology; TSOP LOC packages; heat dissipation; package reliability; solder joint reliability; solderability; thermal conductivity; thermal dissipation; thermal impedance; warpage control; Conducting materials; Copper alloys; Costs; Lab-on-a-chip; Lead; Logic devices; Packaging; Palladium; Random access memory; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1999. 1999 Proceedings. 49th

Conference_Location

San Diego, CA

ISSN

0569-5503

Print_ISBN

0-7803-5231-9

Type

conf

DOI

10.1109/ECTC.1999.776280

Filename

776280