Title :
X-Band Receiver Front-End Chip in Silicon Germanium Technology
Author :
Quach, T.K. ; Bryant, C.A. ; Creech, G.L. ; Groves, K.S. ; James, T.L. ; Mattamana, A.G. ; Orlando, P.L. ; Patel, V.J. ; Drangmeister, R.G. ; Johnson, L.M. ; Kormanyos, B.K. ; Bonebright, R.K.
Author_Institution :
Air Force Res. Lab., Wright-Patterson AFB, OH
Abstract :
This paper reports a demonstration of X-band receiver RF front-end components and the integrated chipset implemented in 0.18 mum silicon germanium (SiGe) technology. The system architecture consists of a single down conversion from X-band at the input to S-band at the intermediate frequency (IF) output. The microwave monolithic integrated circuit (MMIC) includes an X-band low noise amplifier, lead-lag splitter, balanced amplifiers, double balanced mixer, absorptive filter, and an IF amplifier. The integrated chip achieved greater than 30 dB of gain and less than 6 dB of noise figure.
Keywords :
Ge-Si alloys; MMIC amplifiers; intermediate-frequency amplifiers; low noise amplifiers; mixers (circuits); radio receivers; IF amplifier; SiGe; X-band receiver front-end chip; absorptive filter; balanced amplifiers; double balanced mixer; integrated chipset; lead-lag splitter; low noise amplifier; microwave monolithic integrated circuit; silicon germanium technology; size 0.18 mum; system architecture; Frequency conversion; Germanium silicon alloys; Integrated circuit noise; Integrated circuit technology; Low-noise amplifiers; MMICs; Microwave amplifiers; Monolithic integrated circuits; Radio frequency; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1855-8
Electronic_ISBN :
978-1-4244-1856-5
DOI :
10.1109/SMIC.2008.11
