A 27.3dBm DECT Power Amplifier for 2.5V Supply in 0.13μm CMOS

Author

Zimmermann, Niklas ; Johansson, Ted ; Heinen, Stefan

Author_Institution

Dept. of Integrated Analog Circuits, RWTH Aachen Univ., Aachen

fYear

2008

fDate

23-25 Jan. 2008

Firstpage

30

Lastpage

33

Abstract

This work presents a CMOS RF power amplifier (PA) for 1.9 GHz, which has been realized in a standard 0.13 mum CMOS technology. The PA has a two-stage balanced push-pull structure. The stages are coupled by an LC matching network. It is a prestudy for an integrated PA in a single-chip DECT phone. Due to low breakdown voltages of the CMOS transistors in modern technologies, reliability aspects were paid special attention to for the PA design and layout. The PA can be operated with supply voltages of more than 3.6 V. An off-chip microstrip balun is used for transformation of the load impedance and differential-to-single-ended conversion. The fabricated amplifier has an output power of 540 mW (27.3 dBm) at 2.5 V supply and a power added efficiency (PAE) of 37% and meets the requirements for DECT.

Keywords

CMOS analogue integrated circuits; UHF power amplifiers; baluns; cordless telephone systems; integrated circuit reliability; CMOS technology; CMOS transistors; DECT power amplifier; Digital European Cordless Telephone; LC matching network; RF power amplifier; frequency 1.9 GHz; off-chip microstrip balun; power 540 mW; power added efficiency; reliability aspects; single-chip DECT phone; size 0.13 mum; voltage 2.5 V; CMOS technology; Capacitors; Impedance matching; Integrated circuit technology; Parasitic capacitance; Power amplifiers; Power generation; Radiofrequency amplifiers; Transceivers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on

Conference_Location

Orlando, FL

Print_ISBN

978-1-4244-1855-8

Electronic_ISBN

978-1-4244-1856-5

Type

conf

DOI

10.1109/SMIC.2008.14

Filename

4446248