• DocumentCode
    2937533
  • Title

    Design of CMOS Millimeter-Wave Cross-Coupled LC Quadrature VCOs with Varactorless Frequency Tuning

  • Author

    Chamas, Ibrahim R. ; Raman, Sanjay

  • Author_Institution
    Bradley Dept. of ECE, Virginia Polytech. Inst. & State Univ., Blacksburg, VA
  • fYear
    2008
  • fDate
    23-25 Jan. 2008
  • Firstpage
    38
  • Lastpage
    41
  • Abstract
    We present the analysis and design of a 60 GHz LC QVCO in a 90 nm RF CMOS process based on the disconnected-source parallel coupled QVCO topology. We introduce a first order linear model of an LC QVCO at millimeter wave frequencies and derive the oscillator steady-state parameters. Varactor size optimization for maximum quality factor at millimeter wave frequencies is thoroughly analyzed. To overcome the classical tradeoff between the varactor quality factor and tuning range, we suggest an alternative wide-band linear frequency tuning technique based on the fundamental operation of LC QVCOs. By changing the bias of the coupling transistors (GMc-tuning), a wide frequency tuning range of 5 GHz (57.5 GHz rarr 62.5 GHz) can be achieved with very linear characteristics. The GMc-tuning technique exhibits 4 dBc/Hz lower phase noise than a varactor solution. The circuit draws a maximum of 17.6 mA (excluding buffer circuits) from a 1 V supply.
  • Keywords
    CMOS integrated circuits; Q-factor; circuit tuning; integrated circuit design; millimetre wave devices; oscillators; varactors; CMOS millimeter-wave cross-coupled LC quadrature VCO; RF CMOS process; frequency 5 GHz; frequency 57.5 GHz to 62.5 GHz; oscillator steady-state parameters; size 90 nm; varactor quality factor; varactorless frequency tuning; wideband linear frequency tuning technique; CMOS process; Circuits; Millimeter wave technology; Millimeter wave transistors; Q factor; Radio frequency; Semiconductor device modeling; Topology; Tuning; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1855-8
  • Electronic_ISBN
    978-1-4244-1856-5
  • Type

    conf

  • DOI
    10.1109/SMIC.2008.16
  • Filename
    4446250