Title :
Probing Hot Carrier Phenomena in npn and pnp SiGe HBTs
Author :
Cheng, Peng ; Appaswamy, Aravind ; Bellini, Marco ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., N.W. Georgia Inst. of Technol., Atlanta, GA
Abstract :
A new method for analyzing breakdown phenomena and differentiating between damage created by hot electrons and hot holes under impact ionization induced stress within SiGe HBTs is presented. Measurements demonstrate that electrons are more effective than holes for creating impact ionization induced damage under mixed-mode stress. Lucky electrons and lucky holes can be directly observed using this approach, and the induced hot carrier current yields important insight into understanding reliability of SiGe HBTs under aggressive stress.
Keywords :
Ge-Si alloys; electric breakdown; heterojunction bipolar transistors; hot carriers; impact ionisation; mixed analogue-digital integrated circuits; SiGe; breakdown phenomena; hot electrons; hot holes; impact ionization; mixed-mode stress; npn SiGe HBT; pnp SiGe HBT; probing hot carrier phenomena; BiCMOS integrated circuits; Charge carrier processes; Degradation; Electric breakdown; Germanium silicon alloys; Heterojunction bipolar transistors; Hot carriers; Impact ionization; Silicon germanium; Stress;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1855-8
Electronic_ISBN :
978-1-4244-1856-5
DOI :
10.1109/SMIC.2008.20
