High Voltage Complementary Epi Free LDMOS Module with 70 V PLDMOS for a 0.25 μm SiGe:C BiCMOS Platform

Author

Sorge, R. ; Fischer, A. ; Ehwald, K.E. ; Barth, R. ; Ostrovsky, P. ; Pliquett, R. ; Schulz, K. ; Bolze, D. ; Schley, P. ; Schmidt, D. ; Wulf, H.-E. ; Grützediek, H. ; Scheerer, J. ; Hartmetz, P.

Author_Institution

lHP, Frankfurt

fYear

2008

fDate

23-25 Jan. 2008

Firstpage

58

Lastpage

61

Abstract

We demonstrate the integration of a low-cost, high-voltage complementary LDMOS module with BVdss of -71V and 83V for the PLDMOS and the NLDMOS, respectively, into an advanced industrial 0.25 mum SiGe:C BICMOS process. The essential deep N-well for the high voltage PLDMOS is formed by a single 6MeV P implantation step. BVdss*ft of the NLDMOS accomplishes record values > 900 VGHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MOSFET circuits; carbon; ion implantation; BiCMOS integrated circuits; Epi free LDMOS module; NLDMOS; PLDMOS; SiGe:C; SiGe:C BiCMOS platform; electron volt energy 6 MeV; size 0.25 mum; voltage 70 V; voltage 83 V; BiCMOS integrated circuits; CMOS technology; Costs; Energy management; High power amplifiers; Isolation technology; Low voltage; Radio frequency; Radiofrequency amplifiers; Switching frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on

Conference_Location

Orlando, FL

Print_ISBN

978-1-4244-1855-8

Electronic_ISBN

978-1-4244-1856-5

Type

conf

DOI

10.1109/SMIC.2008.21

Filename

4446255