Title :
Impact of Ballast Resistor Implementations on Linearity and RF Performance of Common-Base SiGe Power HBTs
Author :
Li, Hui ; Qin, Guoxuan ; Ma, Zhenqiang ; Ma, Pingxi ; Racanelli, Marco
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI
Abstract :
The influence of ballasting resistor implementations on the RF performance (both small-signal and large-signal) and on the linearity of common-base (CB) SiGe power HBTs is experimentally investigated. It is demonstrated that higher RF performance and better linearity can be achieved from CB SiGe HBTs by using emitter ballasting scheme than using base ballasting scheme.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; power bipolar transistors; radiofrequency integrated circuits; resistors; RF performance; SiGe; ballast resistor; base ballasting; common-base power HBT; emitter ballasting; Electronic ballasts; Germanium silicon alloys; Heterojunction bipolar transistors; III-V semiconductor materials; Linearity; Radio frequency; Resistors; Silicon germanium; Substrates; Thermal conductivity;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1855-8
Electronic_ISBN :
978-1-4244-1856-5
DOI :
10.1109/SMIC.2008.24
