Title :
Kirk Effect Induced Bias Dependency of Thermal Resistance in SiGe HBTs
Author :
Jiang, Hao ; Zheng, Jie ; Recanelli, M.
Author_Institution :
Sch. of Eng., San Francisco State Univ., San Francisco, CA
Abstract :
The thermal resistance of SiGe HBTs for high power applications reduces significantly when the bias current increases. This phenomenon is explained by both measurements and simulations for the first time.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; thermal resistance; Kirk effect induced bias dependency; SiGe; bias current; heterojunction bipolar transistor technology; self-heating; thermal resistance; Germanium silicon alloys; Heterojunction bipolar transistors; Kirk field collapse effect; Semiconductor device measurement; Silicon germanium; Temperature distribution; Thermal conductivity; Thermal engineering; Thermal resistance; Voltage;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1855-8
Electronic_ISBN :
978-1-4244-1856-5
DOI :
10.1109/SMIC.2008.25
