Title :
A Broadband Millimeter-Wave Low-Noise Amplifier in SiGe BiCMOS Technology
Author :
Chen, Austin ; Liang, Hsiao-Bin ; Baeyens, Yves ; Chen, Young-Kai ; Lin, Yo-Sheng
Author_Institution :
Alcatel-Lucent/Bell Lab., Murray Hill, NJ
Abstract :
A broadband millimeter-wave low-noise amplifier (LNA) operating at V-band (50 GHz to 75 GHz) is presented. The circuit is fabricated with 0.18 mum SiGe BiCMOS technology. The matching networks are synthesized with microstrip transmission lines. The LNA achieves a maximum transducer power gain |S21| of ~16 dB, a noise figure of 6.8 dB at 62 GHz, and a 3-dB bandwidth from 54 GHz to 70 GHz. The output return loss is better than 12 dB from 59 GHz to 72 GHz. The reverse isolation |S12| is better than 40 dB over the 3-dB bandwidth. The LNA draws 9.6 mA from a 2.5 V supply.
Keywords :
BiCMOS integrated circuits; low noise amplifiers; SiGe; SiGe BiCMOS technology; broadband millimeter-wave; frequency 50 GHz to 75 GHz; low-noise amplifier; microstrip transmission lines; Bandwidth; BiCMOS integrated circuits; Circuit synthesis; Germanium silicon alloys; Low-noise amplifiers; Microstrip; Millimeter wave circuits; Millimeter wave technology; Network synthesis; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1855-8
Electronic_ISBN :
978-1-4244-1856-5
DOI :
10.1109/SMIC.2008.28
