DocumentCode :
2937881
Title :
Modeling of power semiconductor devices, problems, limitations and future trends
Author :
Fatemizadeh, B. ; Lauritzen, P.O. ; Siber, D.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
fYear :
1996
fDate :
11-14 Aug 1996
Firstpage :
120
Lastpage :
127
Abstract :
The problems and future trends of the modeling of power devices are reviewed and the different modeling methods compared as to their compromise between convenience, accuracy, numerical efficiency and accuracy in implementing physical effects. Many of the existing power device models are listed, and their main features are identified and compared
Keywords :
SPICE; circuit analysis computing; digital simulation; power semiconductor devices; semiconductor device models; SPICE models; computer aided simulation; modeling methods comparison; numerical efficiency; physical effects; power electronics; power semiconductor devices modelling; Analytical models; Circuit simulation; Computational modeling; Computer simulation; Equations; Power electronics; Power semiconductor devices; SPICE; Semiconductor device modeling; Semiconductor devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computers in Power Electronics, 1996., IEEE Workshop on
Conference_Location :
Portland, OR
ISSN :
1093-5142
Print_ISBN :
0-7803-3977-0
Type :
conf
DOI :
10.1109/CIPE.1996.612346
Filename :
612346
Link To Document :
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