DocumentCode :
2937999
Title :
Current induced domain motion in synthetic spin valves
Author :
Lu, Z. ; Zhou, Y. ; Du, Y. ; Wilton, D. ; Moate, R. ; Pan, G.
Author_Institution :
Univ. of Plymouth, Plymouth
fYear :
2006
fDate :
8-12 May 2006
Firstpage :
272
Lastpage :
272
Abstract :
The authors report on current-induced domain wall (DW) movement in synthetic spin valves. The high exchanged field in synthetic antiferromagnets (SAF) keeps the the magnetization of the pinned layer unchanged during the measurement. Thus, the GMR measurement allows to an accurate determination of the DW position and displacement.
Keywords :
giant magnetoresistance; magnetic domain walls; magnetisation; spin valves; GMR measurement; current induced domain motion; domain wall displacement; domain wall position; high exchanged field; magnetization; pinned layer; synthetic antiferromagnets; synthetic spin valves; Laboratories; Magnetic devices; Magnetic domain walls; Magnetic domains; Magnetic field measurement; Magnetic fields; Magnetic switching; Saturation magnetization; Spin valves; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
Type :
conf
DOI :
10.1109/INTMAG.2006.375854
Filename :
4261705
Link To Document :
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