Title :
The way of the disturbance injection for simulating the frequency response of the intrinsic immunity of naked integrated circuits
Author :
Hanyu Zheng ; Zixin Wang ; Tao Su
Author_Institution :
Sch. of Phys. & Eng., Sun Yat-sen Univ., Guangzhou, China
Abstract :
To simulate the conducted radio frequency immunity, shortened `immunity´, of integrated circuit (ICs) requires the knowledge on the transfer coefficient of the propagation network for the disturbance and the intrinsic response of the on-chip transistor circuits to the disturbance directly on the circuit. This paper intends to find the correct simulation test bench to extract the intrinsic response of the on-chip circuits. The emphasis is the suitable disturbance injection networks (DIN) which couples the disturbance into the circuit and at the same time does not changes the immunity of the circuit. The oscillator circuit is selected as the device under test (DUT). Two immunity models with different DIN configurations are simulated. Their results are compared. The comparison reveals that the intrinsic frequency immunity of an IC depends on not only on the disturbance on the IC but also the configuration of DIN. The model of the IC itself is not sufficient for extracting the intrinsic immunity.
Keywords :
circuit simulation; frequency response; integrated circuit testing; interference suppression; radiofrequency integrated circuits; radiofrequency oscillators; DIN; DUT; IC; device under test; disturbance injection network; electromagnetic interference; frequency response simulation; integrated circuit; intrinsic response; on-chip transistor circuit; oscillator circuit; radiofrequency intrinsic immunity; transfer coefficient; Clocks; Crystals; Frequency response; Integrated circuit modeling; Load modeling; Oscillators; Electromagnetic Interference; Integrated Circuits; Oscillator; Simulation;
Conference_Titel :
Environmental Electromagnetics (CEEM), 2012 6th Asia-Pacific Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-0030-8
DOI :
10.1109/CEEM.2012.6410638