• DocumentCode
    2938168
  • Title

    Ultra-Low Resistance-Area-Product in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

  • Author

    Nagamine, Y. ; Maehara, H. ; Tsunekawa, K. ; Djayaprawira, D.D. ; Watanabe, N. ; Yuasa, S. ; Ando, K.

  • Author_Institution
    Canon ANELVA Corp., Tokyo
  • fYear
    2006
  • fDate
    8-12 May 2006
  • Firstpage
    281
  • Lastpage
    281
  • Abstract
    A successful attempt in obtaining an ultra-low resistance-area-product (RA) of about 0.4 Omegamum2 with TMR ratio of about 57% at room temperature by optimizing the applied sputtering power for the MgO deposition in polycrystalline CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) was reported.
  • Keywords
    boron alloys; cobalt alloys; iron alloys; magnesium compounds; sputter deposition; tunnelling magnetoresistance; CoFeB-MgO; applied sputtering power; magnetic tunnel junctions; ultra-low resistance-area-product; Giant magnetoresistance; Hard disks; Insulation; Magnetic films; Magnetic heads; Magnetic tunneling; Silicon; Sputtering; Temperature; Tunneling magnetoresistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2006. INTERMAG 2006. IEEE International
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    1-4244-1479-2
  • Type

    conf

  • DOI
    10.1109/INTMAG.2006.375863
  • Filename
    4261714
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2938168