DocumentCode :
2938168
Title :
Ultra-Low Resistance-Area-Product in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
Author :
Nagamine, Y. ; Maehara, H. ; Tsunekawa, K. ; Djayaprawira, D.D. ; Watanabe, N. ; Yuasa, S. ; Ando, K.
Author_Institution :
Canon ANELVA Corp., Tokyo
fYear :
2006
fDate :
8-12 May 2006
Firstpage :
281
Lastpage :
281
Abstract :
A successful attempt in obtaining an ultra-low resistance-area-product (RA) of about 0.4 Omegamum2 with TMR ratio of about 57% at room temperature by optimizing the applied sputtering power for the MgO deposition in polycrystalline CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) was reported.
Keywords :
boron alloys; cobalt alloys; iron alloys; magnesium compounds; sputter deposition; tunnelling magnetoresistance; CoFeB-MgO; applied sputtering power; magnetic tunnel junctions; ultra-low resistance-area-product; Giant magnetoresistance; Hard disks; Insulation; Magnetic films; Magnetic heads; Magnetic tunneling; Silicon; Sputtering; Temperature; Tunneling magnetoresistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
Type :
conf
DOI :
10.1109/INTMAG.2006.375863
Filename :
4261714
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2938168
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