Title :
Transient Switching Behavior in Silicon MOSFET RF Switches
Author :
Caverly, Robert H. ; Manosca, Jeffrey J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Villanova Univ., Villanova, PA
Abstract :
Silicon MOS devices are seeing increased use in highly integrated RFICs. This paper shows the results of an investigation of the impact of the external gate bias resistance as well as the distributed RC gate effect on switching speed in these devices. A model is presented with both simulations and measured data used to verify the model. The model also shows that the optimal number of gate fingers in the 10 to 20 range.
Keywords :
field effect transistor switches; microwave switches; radiofrequency integrated circuits; RFIC; distributed RC gate effect; external gate bias resistance; microwave switches; silicon MOS device; silicon MOSFET RF switches; switching speed; transient switching behavior; Electrical resistance measurement; Fingers; Impedance; MOSFET circuits; Power MOSFET; Power system modeling; Radio frequency; Radiofrequency integrated circuits; Silicon; Switches;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1855-8
Electronic_ISBN :
978-1-4244-1856-5
DOI :
10.1109/SMIC.2008.51
