Title :
Improved Compact Model for High Speed SiGe HBT Breakdown
Author :
Xu, Hongya ; Kasper, Erich
Author_Institution :
Inst. fur Halbleitertechnik, Univ. Stuttgart, Stuttgart
Abstract :
High speed SiGe-HBTs provide only a small VCE voltage variation between the saturation region (low VCE) and the breakdown at also rather low values. For high speed circuits it is unavailable to drive the SiGe HBT near the breakdown limits. In compact models used for circuit design the breakdown is described by the week avalanche approximation which is unsufficient for modern HBTs with short collector regions. We propose a more refined approximation which is based on the deed space concept for electrons to be accelerated up to the impact ionization energy. The model is implemented in the VBIC compact model.
Keywords :
Ge-Si alloys; electric breakdown; heterojunction bipolar transistors; semiconductor materials; SiGe; VBIC compact model; breakdown limits; high speed HBT breakdown; saturation region; short collector regions; voltage variation; Acceleration; Avalanche breakdown; Breakdown voltage; Circuit synthesis; Electric breakdown; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; Impact ionization; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1855-8
Electronic_ISBN :
978-1-4244-1856-5
DOI :
10.1109/SMIC.2008.57