• DocumentCode
    2938317
  • Title

    High-Voltage HBTs Compatible with High-Speed SiGe BiCMOS Technology

  • Author

    Geynet, B. ; Chevalier, P. ; Chouteau, S. ; Avenier, G. ; Schwartzmann, T. ; Gloria, D. ; Dambrine, G. ; Danneville, F. ; Chantre, A.

  • Author_Institution
    STMicroelectronics, Crolles
  • fYear
    2008
  • fDate
    23-25 Jan. 2008
  • Firstpage
    210
  • Lastpage
    213
  • Abstract
    This paper describes the integration of high-voltage HBTs in a high-speed SiGe BiCMOS technology. HBTs with BVCEO from 2 V to 5 V featuring an all-implanted collector and fully compatible with a 230-GHz fT BiCMOS technology have been fabricated using only one additional mask.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; masks; SiGe; additional mask; frequency 230 GHz; high-speed SiGe BiCMOS technology; high-voltage HBT compatible; voltage 2 V to 5 V; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Silicon carbide; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1855-8
  • Electronic_ISBN
    978-1-4244-1856-5
  • Type

    conf

  • DOI
    10.1109/SMIC.2008.59
  • Filename
    4446293
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2938317