DocumentCode :
2938317
Title :
High-Voltage HBTs Compatible with High-Speed SiGe BiCMOS Technology
Author :
Geynet, B. ; Chevalier, P. ; Chouteau, S. ; Avenier, G. ; Schwartzmann, T. ; Gloria, D. ; Dambrine, G. ; Danneville, F. ; Chantre, A.
Author_Institution :
STMicroelectronics, Crolles
fYear :
2008
fDate :
23-25 Jan. 2008
Firstpage :
210
Lastpage :
213
Abstract :
This paper describes the integration of high-voltage HBTs in a high-speed SiGe BiCMOS technology. HBTs with BVCEO from 2 V to 5 V featuring an all-implanted collector and fully compatible with a 230-GHz fT BiCMOS technology have been fabricated using only one additional mask.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; masks; SiGe; additional mask; frequency 230 GHz; high-speed SiGe BiCMOS technology; high-voltage HBT compatible; voltage 2 V to 5 V; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Silicon carbide; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1855-8
Electronic_ISBN :
978-1-4244-1856-5
Type :
conf
DOI :
10.1109/SMIC.2008.59
Filename :
4446293
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2938317
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