DocumentCode
2938577
Title
Optical Bandwidth Optimization in a Transistor Laser by Quantum Well Location Effect
Author
Taghavi, Iman ; Kaatuzian, Hassan
Author_Institution
Electr. Eng. Dept., Amirkabir Univ. of Technol., Tehran, Iran
fYear
2010
fDate
19-21 June 2010
Firstpage
1
Lastpage
4
Abstract
We report a numerical method based on experimental data and modified charge control model to simulate quantum-well dislocation effect inside the base region of a Transistor Laser with 150μm cavity length. Utilizing a reverse calculation method, base recombination lifetime is simulated in order to investigate optical bandwidth dependence on quantum well location. The analysis of coupled carrier photon equations shows notable enhancement in optical bandwidth (up to 54GHz) due to moving the quantum well toward collector which maximizes at ~730Å while current gain (β) decreases.
Keywords
Bandwidth; Charge carrier processes; Equations; Gallium arsenide; Heterojunction bipolar transistors; Laser modes; Optical coupling; Quantum well lasers; Radiative recombination; Spontaneous emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics and Optoelectronic (SOPO), 2010 Symposium on
Conference_Location
Chengdu, China
Print_ISBN
978-1-4244-4963-7
Electronic_ISBN
978-1-4244-4964-4
Type
conf
DOI
10.1109/SOPO.2010.5504270
Filename
5504270
Link To Document