Optical Bandwidth Optimization in a Transistor Laser by Quantum Well Location Effect

We report a numerical method based on experimental data and modified charge control model to simulate quantum-well dislocation effect inside the base region of a Transistor Laser with 150μm cavity length. Utilizing a reverse calculation method, base recombination lifetime is simulated in order to investigate optical bandwidth dependence on quantum well location. The analysis of coupled carrier photon equations shows notable enhancement in optical bandwidth (up to 54GHz) due to moving the quantum well toward collector which maximizes at ~730Å while current gain (β) decreases.