An analog random-access memory in the AVLSI-RA process for an interpolating pad chamber

Author

Britton, C.L., Jr. ; Wintenberg, A.L. ; Read, K.F. ; Clonts, L.G. ; Kennedy, E.J. ; Smith, R.S. ; Swann, B.K. ; Musser, J.A.

Author_Institution

Oak Ridge Nat. Lab., TN, USA

Volume

1

fYear

1994

fDate

30 Oct-5 Nov 1994

Firstpage

261

Abstract

An analog memory for an Interpolating Pad Chamber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process. The goal was to develop a rad-hard analog pipeline that would deliver approximately 9-bit performance, a readout settling time of 500 ns following read enable, an input and output dynamic range of +/-2.25 V, a corrected RMS pedestal of approximately 5 mV or less, and a power dissipation of less than 10 mW/channel. The pre- and post-radiation measurements to 5 MRad are presented

Keywords

analogue storage; detector circuits; nuclear electronics; 5 Mrad; 5 mV; 500 ns; 9-bit performance; AVLSI-RA CMOS process; AVLSI-RA process; Interpolating Pad Chamber; analog random-access memory; corrected RMS pedestal; input dynamic range; output dynamic range; post-radiation; power dissipation; pre-radiation; rad-hard analog pipeline; read enable; readout settling time; Analog memory; Atherosclerosis; CMOS process; Detectors; Laboratories; Multiplexing; Preamplifiers; Radiation hardening; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1994., 1994 IEEE Conference Record

Conference_Location

Norfolk, VA

Print_ISBN

0-7803-2544-3

Type

conf

DOI

10.1109/NSSMIC.1994.474415

Filename

474415