Title :
Proton irradiation on AC-coupled silicon microstrip detectors
Author :
Unno, Y. ; Ujiie, N. ; Hinode, F. ; Kohriki, T. ; Kondo, T. ; Iwasaki, H. ; Terada, S. ; Ohmoto, T. ; Yoshikawa, M. ; Ohyama, H. ; Handa, T. ; Iwata, Y. ; Ohsugi, T. ; O´Shaughnessy, K. ; Rowe, B. ; Webster, A. ; Wilder, M. ; Palounek, A. ; Ziock, H. ; Pa
Author_Institution :
KEK, Japan
fDate :
30 Oct-5 Nov 1994
Abstract :
To test the radiation tolerance of full-size detectors, four large-area AC-coupled single-sided silicon microstrip detectors were fabricated. The detectors had a size of 6 cm×3.4 cm and were made out of a 300 μm thick, high-resistivity, n-type silicon, simulating the p-side of the double-sided silicon microstrip detectors being developed. The AC coupling layer had either a single layer of SiO2 or double layers of SiO2 and Si3N4 , in combination with the surface passivation of SiO2 or Si3N4. The detectors were irradiated at room temperature by 500 MeV protons at TRIUMF to a fluence of 5.7×10 13 protons/cm2, promptly stored at 0°C after irradiation, and periodically measured over the following year. The full depletion voltages showed a substantial annealing and a gradual anti-annealing. The result was compared with the predictions of existing damage parameterization. Time variation of other characteristics, such as leakage current, interstrip and coupling capacitances, and strip-edge microdischarges was also followed
Keywords :
annealing; elemental semiconductors; passivation; position sensitive particle detectors; proton detection; proton effects; silicon radiation detectors; 0 C; 293 K; 3.4 cm; 500 MeV; 6 cm; AC coupling layer; AC-coupled microstrip detectors; Si; Si-Si3N4; Si-SiO2; Si3N4; SiO2; annealing; coupling capacitances; damage parameterization; depletion voltages; double layers; full-size detectors; gradual antiannealing; high-resistivity Si; interstrip capacitances; large-area microstrip detectors; leakage current; n-type Si; proton irradiation; radiation tolerance; room temperature; single-sided microstrip detectors; strip-edge microdischarges; surface passivation; time variation; Annealing; Leakage current; Microstrip; Passivation; Protons; Radiation detectors; Silicon radiation detectors; Temperature; Testing; Voltage;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1994., 1994 IEEE Conference Record
Conference_Location :
Norfolk, VA
Print_ISBN :
0-7803-2544-3
DOI :
10.1109/NSSMIC.1994.474422
