Properties of melt-grown ZnSe solid-state radiation detectors

Zinc Selenide (ZnSe) crystals grown using the High Pressure Bridgman (HPB) technique were used to fabricate solid-state radiation detectors measuring 10×10×2 mm³. Sputtered platinum and gold contacts were applied to polished detector blanks. Voltage versus current characteristics were determined for the devices at 25°C. Pulse height spectra were obtained using ²⁴¹Am and ¹⁰⁹Cd at both 25°C and 150°C with applied bias of 9000 V/cm. Current versus temperature was measured over the temperature range of 30°C to 150°C. Performance was measured at energies of 22.1 and 59.5 keV over a temperature range of -70°C to 170°C. Current versus dose rate was measured with 662 keV gamma irradiation. A value of the Mobility-Lifetime product (μτ) for electrons was estimated. Time and temperature dependence of photo-peak position using Pulse Height Analysis (PHA) was studied