Radiation effects at cryogenic temperatures in Si-JFET, GaAs MESFET and MOSFET devices

Author

Citterio, Mauro ; Rescia, Sergio ; Radeka, Veljko

Author_Institution

Brookhaven Nat. Lab., Upton, NY, USA

Volume

2

fYear

1994

fDate

30 Oct-5 Nov 1994

Firstpage

958

Abstract

Front-end electronics for liquid ionization chamber calorimetry at hadron collider experiments may be exposed to substantial levels of ionizing radiation and neutron fluences in a cryogenic environment. Measurements of devices built with rad-hard technologies have shown that devices able to operate in these conditions exist. Several families of devices (Si-JFETs, rad-hard MOSFETs, GaAs MESFETs) have been irradiated and tested at a stable cryogenic temperature up to doses of 55 Mrad of ionizing radiation and up to neutron fluences of 4×10¹⁴ n/cm². Radiation effects on DC characteristics and on noise will be presented

Keywords

MOSFET; Schottky gate field effect transistors; cryogenic electronics; detector circuits; gallium arsenide; gamma-ray effects; junction gate field effect transistors; neutron effects; nuclear electronics; radiation hardening (electronics); semiconductor device noise; 55 Mrad; 90 K; 98 K; DC characteristics; GaAs; GaAs MESFET; MOSFET; Si; Si-JFET; cryogenic temperatures; front-end electronics; gamma irradiation; ionizing radiation; liquid ionization chamber calorimetry; neutron irradiation; noise; Calorimetry; Cryogenics; Gallium arsenide; Ionization chambers; Ionizing radiation; MESFETs; Neutrons; Radiation effects; Radiation hardening; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1994., 1994 IEEE Conference Record

Conference_Location

Norfolk, VA

Print_ISBN

0-7803-2544-3

Type

conf

DOI

10.1109/NSSMIC.1994.474462

Filename

474462