DocumentCode :
293926
Title :
Study of the long term stability of the effective concentration of ionized space charges (Neff) of neutron irradiated silicon detectors fabricated by various thermal oxidation processes
Author :
Li, Z. ; Chen, W. ; Dou, L. ; Eremin, V. ; Kraner, H.W. ; Li, C.J. ; Lindstroem, G. ; Spiriti, E.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
Volume :
2
fYear :
1994
fDate :
30 Oct-5 Nov 1994
Firstpage :
953
Abstract :
An experimental study of the reverse annealing of the effective concentration of ionized space charges (Neff, also called effective doping or impurity concentration) of neutron irradiated high resistivity silicon detectors fabricated on wafers with various thermal oxides has been conducted at room temperature (RT) and elevated temperature (ET). Various thermal oxidations with temperatures ranging from 975°C to 1200°C with and without trichlorethane (TCA), which result in different concentrations of oxygen and carbon impurities, have been used. It has been found that, the RT annealing of the Neff is hindered initially (t<42 days after the radiation) for detectors made on the oxides with high carbon concentrations, and there was no carbon effect on the long term (t>42 days after the radiation) Neff reverse annealing. No apparent effect of oxygen on the Neff stability has been observed at RT. At elevated temperature (80°C), no significant difference in annealing behavior has been found for detectors fabricated on silicon wafers with various thermal oxides. It is apparent that for the initial stages (first and or second) of Neff reverse annealing, there may be no dependence on the oxygen and carbon concentrations
Keywords :
annealing; neutron effects; oxidation; silicon radiation detectors; space charge; 293 K; 80 C; 975 to 1200 C; C impurity; O impurity; Si detectors; annealing; effective concentration; effective doping; impurity concentration; ionized space charges; long term stability; neutron irradiated; reverse annealing; room temperature; thermal oxidation; trichlorethane; Annealing; Conductivity; Detectors; Doping; Impurities; Neutrons; Silicon; Space charge; Stability; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1994., 1994 IEEE Conference Record
Conference_Location :
Norfolk, VA
Print_ISBN :
0-7803-2544-3
Type :
conf
DOI :
10.1109/NSSMIC.1994.474463
Filename :
474463
Link To Document :
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