• DocumentCode
    293946
  • Title

    Spectrometric characteristic improvement of CdTe detectors

  • Author

    Ivanov, V.I. ; Garbusin, V. ; Dorogov, P.G. ; Loutchanski, A.E. ; Kondrashov, V.V.

  • Author_Institution
    Baltic Sci. Instrum., RITEC Ltd., Riga, Latvia
  • Volume
    2
  • fYear
    1994
  • fDate
    30 Oct-5 Nov 1994
  • Firstpage
    837
  • Abstract
    A new pulse shape correction method combined with a pulse shape selection method has been proposed for a CdTe detectors energy resolution improving and the total absorption peak efficiency increasing. The capabilities of the new technique for the spectrometric characteristic improvement are based on the using of specific features of the CdTe detectors output pulses. The energy resolution of about 1% FWHM at 662 keV have been achieved with planar CdTe detector under room temperature without decrease of peak efficiency. Standard measurement techniques give 3.7% FWHM. A significant spectrometric characteristic improvement of the other room temperature semiconductor detectors such as HgI2 and CdZnTe detectors was also obtained
  • Keywords
    II-VI semiconductors; cadmium compounds; gamma-ray detection; semiconductor counters; CdTe detectors; CdZnTe detectors; HgI2 detectors; energy resolution; peak efficiency; planar CdTe detector; pulse shape correction method; pulse shape selection method; room temperature semiconductor detectors; spectrometric characteristic improvement; total absorption peak efficiency; Absorption; Detectors; Energy resolution; Pulse amplifiers; Pulse shaping methods; Scattering; Semiconductor materials; Shape; Spectroscopy; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium and Medical Imaging Conference, 1994., 1994 IEEE Conference Record
  • Conference_Location
    Norfolk, VA
  • Print_ISBN
    0-7803-2544-3
  • Type

    conf

  • DOI
    10.1109/NSSMIC.1994.474484
  • Filename
    474484