Study of THz Oscillations in GaN-Based Planar Nanodevices

Author

Xu, K.Y. ; Song, A.M. ; Chen, Z.M. ; Zheng, Z.Y. ; Wang, G.

Author_Institution

Sch. of Phys. & Telecommun. Eng., South China Normal Univ., Guangzhou, China

fYear

2010

fDate

19-21 June 2010

Firstpage

1

Lastpage

4

Abstract

The feasibility of THz oscillations in a GaN-based planar nanoscale unipolar diode, or a self-switching device (SSD), is analyzed using Monte Carlo simulations. The origin of THz oscillations is contributed to Gunn-effect. The dependence of the Gunn oscillations on geometric parameters and bias conditions has been studied. By using proper parameters, the oscillation frequency can reach 0.6 THz. Moreover, potential applications are discussed in terms of the ease of heat dissipation and generation of oscillations at different frequencies on a single chip, in contrast to a conventional vertical-structure Gunn diode.

Keywords

Gunn diodes; Gunn effect; Gunn oscillators; III-V semiconductors; Monte Carlo methods; gallium compounds; nanophotonics; wide band gap semiconductors; GaN; Gunn diode; Gunn oscillations; Gunn-effect; Monte Carlo simulations; heat dissipation; oscillation frequency; planar nanoscale unipolar diode; self-switching device; terahertz oscillations; Detectors; Electromagnetic compatibility; Electromagnetic heating; Frequency; Gunn devices; Microwave antenna arrays; Microwave devices; Nanoscale devices; Semiconductor diodes; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronic (SOPO), 2010 Symposium on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-4963-7

Electronic_ISBN

978-1-4244-4964-4

Type

conf

DOI

10.1109/SOPO.2010.5504333

Filename

5504333