DocumentCode
2940229
Title
Effect of Memory Element Resistance-Area-Product and Thermal Environment on Writing of Magneto-Thermal MRAM
Author
Deak, J.G. ; Pohm, A.V. ; Daughton, J.M.
Author_Institution
NVE Corp., Eden Prairie
fYear
2006
fDate
8-12 May 2006
Firstpage
395
Lastpage
395
Abstract
This work focuses on an experimental study of the effect of the thermal environment and the resistance area product (RA) of an magnetic tunnel junction (MTJ) on the MTJ reliability and minimum required heating current of CPP thermally written magnetic random access memory (MRAM). Proper device design should optimize cell thermal resistance and MTJ RA for both reliability and minimum power consumption.
Keywords
magnetic storage; magnetic tunnelling; random-access storage; heating current; magnetic random access memory; magnetic tunnel junction; magneto-thermal MRAM; memory element resistance-area-product; reliability; Conductors; Energy consumption; Heating; Magnetic tunneling; Memory management; Random access memory; Thermal conductivity; Thermal management; Thermal resistance; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location
San Diego, CA
Print_ISBN
1-4244-1479-2
Type
conf
DOI
10.1109/INTMAG.2006.376119
Filename
4261828
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