Title :
Effect of Memory Element Resistance-Area-Product and Thermal Environment on Writing of Magneto-Thermal MRAM
Author :
Deak, J.G. ; Pohm, A.V. ; Daughton, J.M.
Author_Institution :
NVE Corp., Eden Prairie
Abstract :
This work focuses on an experimental study of the effect of the thermal environment and the resistance area product (RA) of an magnetic tunnel junction (MTJ) on the MTJ reliability and minimum required heating current of CPP thermally written magnetic random access memory (MRAM). Proper device design should optimize cell thermal resistance and MTJ RA for both reliability and minimum power consumption.
Keywords :
magnetic storage; magnetic tunnelling; random-access storage; heating current; magnetic random access memory; magnetic tunnel junction; magneto-thermal MRAM; memory element resistance-area-product; reliability; Conductors; Energy consumption; Heating; Magnetic tunneling; Memory management; Random access memory; Thermal conductivity; Thermal management; Thermal resistance; Writing;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.376119
