Title :
1.8V Power Suppy 16MBIT-MRAM with 40% Array Efficiency
Author :
Yoda, H. ; Kai, T. ; Iwata, Y. ; Ikegawa, S. ; Tsuchida, K. ; Asao, Y. ; Kishi, T.
Author_Institution :
Corp. R&D Center, Kawasaki
Abstract :
MRAM is the most promising candidate for a non-volatile random access memory because of its unlimited endurance which other non-volatile memories lack. In this paper, technologies for low voltage operation and reasonable array efficiency were developed and successfully demonstrated. In this study, new circuitry was developed to lower the wire resistance and MTJ structure was properly designed to lower the write current.
Keywords :
magnetic tunnelling; power supply circuits; random-access storage; MRAM; array efficiency; efficiency 40 percent; low voltage operation; magnetic tunnel junction structure; nonvolatile random access memory; power supply; voltage 1.8 V; wire resistance; write current; Circuits; Low voltage; Nonvolatile memory; Random access memory; Research and development; Robustness; Shape; Switches; Wires; Writing;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.376120
