Title :
Switching margin comparison of Stoner-Wohlfarth MRAM and biased zero total anisotropy toggle mode MRAM
Author :
Wang, S. ; Fujiwara, H.
Author_Institution :
Alabama Univ., Tuscaloosa
Abstract :
This paper will give a detailed comparison of the Stoner-Wohlfarth type MRAM (SW-MRAM) and the biased zero total anisotropy (ZTA) toggle mode MRAM (T-MRAM) in the aspects of operating fields and their operating field margin ratios.
Keywords :
magnetic anisotropy; magnetic storage; magnetic switching; magnetoresistive devices; random-access storage; Stoner-Wohlfarth MRAM; antiparallel magnetization configuration; biased zero total anisotropy; switching margin comparison; synthentic antiferromagnet memory layer; toggle mode MRAM; Anisotropic magnetoresistance; Antiferromagnetic materials; Astronomy; Couplings; Energy barrier; Physics; Saturation magnetization; Shape; Sun; Thermal stability;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.376121
