• DocumentCode
    2940321
  • Title

    Disturb robust switching astroid curve of C-shaped cell with weakly coupled synthetic anti-ferromagnetic layer

  • Author

    Nakayama, M. ; Kai, T. ; Ikegawa, S. ; Yoda, H. ; Kishi, T. ; Kitagawa, E. ; Nagase, T. ; Yoshikawa, M. ; Asao, Y. ; Tsuchida, K.

  • Author_Institution
    Toshiba Corp., Kawasaki
  • fYear
    2006
  • fDate
    8-12 May 2006
  • Firstpage
    400
  • Lastpage
    400
  • Abstract
    In this paper, we propose a C-shaped cell with weakly coupled SAF (WSAF) layer, which features large Hc, small operational switching field and improved robustness against the writing disturbance with large field on hard axis. we have studied astroid curve of C-shaped cell using WSAF free layers, which improve half-selected problem with large field on hard axis. This technology is estimated to be extendable to 256-512Mb MRAM having chip area comparable with DRAM.
  • Keywords
    magnetic switching; magnetoresistive devices; random-access storage; MRAM; astroid curve; magnetoresistive random access memory; robust switching astroid curve; weakly coupled synthetic antiferromagnetic layer; Antiferromagnetic materials; Magnetic domains; Magnetic switching; Magnetization; National electric code; Nonvolatile memory; Random access memory; Robustness; Shape control; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2006. INTERMAG 2006. IEEE International
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    1-4244-1479-2
  • Type

    conf

  • DOI
    10.1109/INTMAG.2006.376124
  • Filename
    4261833
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2940321