Title :
Monte Carlo simulation of resonance fluorescence under non-Poissonian excitation
Author :
Felinto, D. ; Khoury, A.Z. ; Vianna, S.S.
Author_Institution :
Dept. de Fisica, Univ. Fed. de Pernambuco, Recife, Brazil
Abstract :
Summary form only given. The development of laser sources with sub-Poissonian photodetection statistics raises the problem of how such statistical property of a laser could influence an atomic system and how it could he used in novel applications. In this work we present semi-classical Monte Carlo simulations of the resonance fluorescence experiment in which we consider a variable statistics for the energy exchange between atoms and excitation laser. The laser photon statistics is taken into account by considering bunching and antibunching effects of the absorption and stimulated emission processes while spontaneous emission is still treated as a memoryless process. Our study is motivated both by the interesting statistical properties of the atom-field interaction itself and by the possibility of employing sub-Poissonian lasers on the construction of a magneto-optical trap.
Keywords :
Monte Carlo methods; fluorescence; laser beam effects; magneto-optical effects; resonant states; statistical analysis; stimulated emission; Monte Carlo simulation; antibunching effects; atom-field interaction; atomic system; bunching effects; energy exchange; excitation laser; laser photon statistics; laser sources; magneto-optical trap; memoryless process; non-Poissonian excitation; resonance fluorescence; resonance fluorescence experiment; semi-classical Monte Carlo simulations; statistical properties; statistical property; stimulated emission processes; sub-Poissonian lasers; sub-Poissonian photodetection statistics; Absorption; Atom lasers; Atomic beams; Energy exchange; Fluorescence; Laser excitation; Resonance; Spontaneous emission; Statistics; Stimulated emission;
Conference_Titel :
Quantum Electronics Conference, 2000. Conference Digest. 2000 International
Conference_Location :
Nice, France
Print_ISBN :
0-7803-6318-3
DOI :
10.1109/IQEC.2000.908086