Title :
A 0.13-μm HBT divide-by-6 injection-locked frequency divider
Author :
Wang, Lei ; Xiong, Yong-Zhong ; Hu, San-Ming ; Lim, Teck-Guan
Abstract :
The design and analysis of a D-band divide-by-6 injection-locked frequency divider (ILFD) are presented. The circuit employs a microstrip Lange coupler, a microstrip delay line, and a pair of Cascode transistors to form a feedback loop with a center natural frequency of 24GHz to achieve a divide-by-6 frequency division operation. The proposed ILFD is fabricated in a 0.13μm SiGe HBT technology and occupies a silicon arngea of 0.7×0.9mm2. The developed chip shows frequency-division locking range from 135GHz to 150.2GHz with 2dBm input signal while consuming 5.25mW to 14.4mW including the output buffer amplifier. A phase noise of -121.58dBc/Hz at 1MHz offset is achieved at 150.2GHz.
Keywords :
Ge-Si alloys; MMIC amplifiers; bipolar MIMIC; bipolar MMIC; bipolar analogue integrated circuits; circuit feedback; delay lines; frequency dividers; heterojunction bipolar transistors; injection locked amplifiers; integrated circuit design; integrated circuit noise; microstrip couplers; millimetre wave amplifiers; phase noise; D-band divide-by-6 injection-locked frequency divider design; HBT divide-by-6 injection-locked frequency divider; ILFD design; SiGe; cascode transistors; feedback loop; frequency 24 GHz; frequency division locking; microstrip Lange coupler; microstrip delay line; output buffer amplifier; phase noise; power 5.25 mW to 14.4 mW; size 0.13 mum; CMOS integrated circuits; CMOS technology; Couplers; Feedback loop; Frequency conversion; Frequency measurement; Oscillators;
Conference_Titel :
Solid State Circuits Conference (A-SSCC), 2011 IEEE Asian
Conference_Location :
Jeju
Print_ISBN :
978-1-4577-1784-0
DOI :
10.1109/ASSCC.2011.6123613
