Performance comparison of IGBTs and MCTs in resonant converters

Author

Li, H.H. ; Trivedi, M. ; Pendharkar, S. ; Winterhalter, C. ; Shenai, K.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

Volume

1

fYear

1995

fDate

18-22 Jun 1995

Firstpage

50

Abstract

High-voltage IGBTs and MCTs were evaluated for application in hard- and soft-switching converters. Static I-V and dynamic switching characteristics were measured at temperatures ranging from 25°C to 125°C. An advanced mixed device and circuit simulator was used to understand the internal carrier dynamics within the semiconductor switching device in which semiconductor and heat diffusion equations are simultaneously solved subject to device boundary conditions imposed by the circuit operation. It is shown that the simulation results are in excellent agreement with the measured data and accurately predict the di/dt- and dv/dt- dependencies of the dynamic switching characteristics

Keywords

MOS-controlled thyristors; circuit analysis computing; insulated gate bipolar transistors; power semiconductor switches; resonant power convertors; semiconductor device models; switching circuits; thermal diffusion; 25 to 125 C; IGBT; MCT; MOS controlled thyristors; advanced mixed device; circuit simulator; device boundary conditions; dynamic switching characteristics; heat diffusion equations; high-voltage; internal carrier dynamics; resonant converters; semiconductor switching device; static I-V characteristics; Circuit simulation; Insulated gate bipolar transistors; Inverters; MOSFETs; Manufacturing; Resonance; Semiconductor optical amplifiers; Temperature measurement; Thyristors; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1995. PESC '95 Record., 26th Annual IEEE

Conference_Location

Atlanta, GA

Print_ISBN

0-7803-2730-6

Type

conf

DOI

10.1109/PESC.1995.474791

Filename

474791