Evaluation of a PIN diode switch for power applications

Author

Schwartzenberg, J.W. ; Nwankpa, C.O. ; Fischl, R. ; Rosen, A. ; Gilbert, D.B. ; Richardson, D.

Author_Institution

Drexel Univ., Philadelphia, PA, USA

Volume

1

fYear

1995

fDate

18-22 Jun 1995

Firstpage

68

Abstract

This paper describes the determination of the steady state operating characteristics of an optically controlled Si p-i-n illuminated from either top or bottom for varying electrode spacings and conducting layer thicknesses. Optically controlled p-i-n diodes have previously been used in both microwave and pulsed power applications and are now being considered for use in high-power, low-frequency (60 Hz) switching application such as active filters, STATCON, and static transfer switches

Keywords

active filters; electrodes; elemental semiconductors; optical switches; p-i-n diodes; power semiconductor diodes; power semiconductor switches; silicon; switching circuits; STATCON; Si; Si PIN diode; active filters; conducting layer thickness; electrode spacings; high-power switching application; low-frequency switching application; microwave applications; optically controlled Si p-i-n; pulsed power applications; static condensers; static transfer switches; steady state operating characteristics; Active filters; Electrodes; Optical control; Optical filters; Optical pulses; Optical switches; P-i-n diodes; PIN photodiodes; Steady-state; Thickness control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1995. PESC '95 Record., 26th Annual IEEE

Conference_Location

Atlanta, GA

Print_ISBN

0-7803-2730-6

Type

conf

DOI

10.1109/PESC.1995.474794

Filename

474794