High-voltage wordline generator for low-power program operation in NAND flash memories

Author

Won, Sam-Kyu ; Noh, Yujong ; Cho, Hyunchul ; Ryu, Jeil ; Choi, Sungwook ; Choi, Sungdae ; Kim, Duckju ; Chung, Junseop ; Han, Bongseok ; Chung, Eui-Young

Author_Institution

Flash Dev. Div., Hynix Semicond. Inc., Icheon, South Korea

fYear

2011

fDate

14-16 Nov. 2011

Firstpage

169

Lastpage

172

Abstract

High-voltage wordline generation circuit with stage-controlled charge pump is developed for low-power NAND flash memories. The proposed stage-controlled charge pump controls an optimized number of stages according to the required program voltage. The proposed high-voltage generator provides sleep-mode operation by turning off the driving clock and regulators during the program verify operation. Using these techniques, the proposed high-voltage generator reduces about 50 percent of power consumption in comparison with a conventional scheme.

Keywords

NAND circuits; charge pump circuits; flash memories; low-power electronics; NAND flash memories; driving clock; high-voltage wordline generation circuit; low-power program operation; program verify operation; program voltage; sleep-mode operation; stage-controlled charge pump controls; Ash; Charge pumps; Clocks; Generators; Regulators; Switches; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Circuits Conference (A-SSCC), 2011 IEEE Asian

Conference_Location

Jeju

Print_ISBN

978-1-4577-1784-0

Type

conf

DOI

10.1109/ASSCC.2011.6123629

Filename

6123629