Title :
Electrons and Holes Charging Current Peaks in Silicon Nanocrystals within SiO2 Layers Fabricated by Plasma Enhanced Chemical Vapor Deposition
Author :
Wang, X. ; Huang, R. ; Song, J. ; Guo, Y.Q. ; Chen, K.J. ; Li, W.
Author_Institution :
Dept. of Phys. & Electr. Eng., Hanshan Normal Univ., Chaozhou, China
Abstract :
Metal-insulator-semiconductors structures (MIS) with a layer of silicon nanocrystals embedded within two SiO2 layers are fabricated by using plasma enhanced chemical vapor deposition. By using current-voltage (I-V) measurements with different sweep rates, we study the mechanism of electrons and holes charging/discharging characteristic of the MIS structures. Distinct current peaks duo to electrons (holes) charging into the nc-Si dots and discharging out of the nc-Si dots are observed. The current peaks are depended on the sweep rate and the areas of current peaks have been used to calculate the charged charge density. The experimental result demonstrates that each nc-Si dots underlying the electrode is charged by one carrier.
Keywords :
MIS structures; elemental semiconductors; nanofabrication; nanostructured materials; plasma CVD; semiconductor quantum dots; silicon; silicon compounds; MIS structures; Si; SiO2-Si-SiO2; charge density; current-voltage measurements; electrode; electron-hole charging current peaks; electron-hole charging-discharging characteristics; metal-insulator-semiconductor structures; plasma enhanced chemical vapor deposition; silicon nanocrystals; Charge carrier processes; Chemical vapor deposition; Current measurement; Electrodes; Metal-insulator structures; Nanocrystals; Plasma chemistry; Plasma measurements; Plasma properties; Silicon;
Conference_Titel :
Photonics and Optoelectronic (SOPO), 2010 Symposium on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-4963-7
Electronic_ISBN :
978-1-4244-4964-4
DOI :
10.1109/SOPO.2010.5504405
