Title :
First-Principles Study of Structural and Electronic Properties of GaNxAs1-X Alloys
Author :
Shu, Wei ; Zhang, Xia ; Wang, Qi ; Huang, Yongqing ; Ren, Xiaomin
Author_Institution :
Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China
Abstract :
Using first-principles total energy calculations, we have studied the structural and electronic properties of GaNxAs1-x alloys within density-functional theory (DFT) framework. The validity of Local density approximation (LDA) and generalized gradient approximation (GGA) has been demonstrated by the calculations of lattice parameters and band-gap bowing. The results show that LDA is relatively more suitable for calculations of GaNAs alloy. The lattice constant calculated decreases in line with vegard´s law in contrast to that the band gap has big composition-dependent bowing parameters. The effects of relaxed atoms and bonds have also been discussed. The relaxation contributes significantly to band-gap bowing.
Keywords :
III-V semiconductors; ab initio calculations; density functional theory; energy gap; gallium arsenide; lattice constants; wide band gap semiconductors; GaNxAs1-x; band-gap bowing; composition-dependent bowing parameters; density-functional theory framework; electronic properties; first-principles total energy calculations; generalized gradient approximation; lattice parameters; local density approximation; structural properties; Approximation methods; Density functional theory; Electrons; Gallium arsenide; Geometry; III-V semiconductor materials; Lattices; Linear discriminant analysis; Nitrogen; Photonic band gap;
Conference_Titel :
Photonics and Optoelectronic (SOPO), 2010 Symposium on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-4963-7
Electronic_ISBN :
978-1-4244-4964-4
DOI :
10.1109/SOPO.2010.5504408