• DocumentCode
    2941503
  • Title

    An area effective forward/reverse body bias generator for within-die variability compensation

  • Author

    Kamae, Norihiro ; Tsuchiya, Akira ; Onodera, Hidetoshi

  • Author_Institution
    Dept. of Commun. & Comput. Eng., Kyoto Univ., Kyoto, Japan
  • fYear
    2011
  • fDate
    14-16 Nov. 2011
  • Firstpage
    217
  • Lastpage
    220
  • Abstract
    To compensate the die-to-die and location correlated variation, we propose to split digital circuit to sub-mm-scale area controlling each area with an on-chip forward/reverse body bias generator (BBG). The proposed BBG is configured as a feedforward control system to achieve small area. The BBG is realized by combining a low output resistance DAC and a charge pump type level shifter. The BBG design is implemented with 1.2V thin gate oxide MOSFET in a 65nm CMOS technology. The simulation and measurement results show that the variation is compensated with an area overhead as small as 2%.
  • Keywords
    CMOS digital integrated circuits; MOSFET; charge pump circuits; digital-analogue conversion; feedforward; BBG design; CMOS technology; DAC; charge pump-type level shifter; die-to-die correlated variation; digital circuit; feedforward control system; forward-reverse body bias generator; location correlated variation; size 65 nm; sub-mm-scale area; thin gate oxide MOSFET; within-die variability compensation; Charge pumps; Clocks; Delay; Generators; Logic gates; Substrates; Switches; Body bias; CMOS; forward bias; reverse bias; substrate island; variability compensation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference (A-SSCC), 2011 IEEE Asian
  • Conference_Location
    Jeju
  • Print_ISBN
    978-1-4577-1784-0
  • Type

    conf

  • DOI
    10.1109/ASSCC.2011.6123641
  • Filename
    6123641