Title :
Determination of HEMTs noise parameters vs. temperature using two measurement methods
Author :
Caddemi, A. ; Di Paola, A. ; Sannino, M.
Author_Institution :
Dipt. di Ingegneria Elettrica, Palermo Univ., Italy
Abstract :
Commercial pseudomorphic HEMTs have been characterized in the 233-313 K temperature range from 6 to 18 GHz with the aim of validating the use of a simplified procedure. We predict the complete noise performance of such pHEMTs by means of a very reduced set of measurements, i.e. the scattering parameters vs. frequency at different temperatures and simply the F50 values vs. frequency at room temperature. The computed noise parameters vs. temperature are compared with those determined by application of the standard measurement procedure. The results show a good accuracy and consistency which allows the simplified method to be employed when rapid noise testing vs. temperature is needed
Keywords :
S-parameters; electric noise measurement; high electron mobility transistors; microwave field effect transistors; microwave measurement; semiconductor device noise; semiconductor device testing; 233 to 313 K; 6 to 18 GHz; F50 values; frequency dependence; noise parameters; pseudomorphic HEMTs; rapid noise testing; scattering parameters; simplified procedure; temperature dependence; Frequency; HEMTs; MODFETs; Measurement standards; Noise measurement; Noise reduction; PHEMTs; Scattering parameters; Temperature distribution; Testing;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 1997. IMTC/97. Proceedings. Sensing, Processing, Networking., IEEE
Conference_Location :
Ottawa, Ont.
Print_ISBN :
0-7803-3747-6
DOI :
10.1109/IMTC.1997.612366
