DocumentCode
2941978
Title
Effect of Electrostatic Discharge on Tunneling Magnetoresistive Recording Head
Author
Lai, W. ; Leung, C. ; Wong, P. ; Shimizu, T.
Author_Institution
SAE Magnetics (HK) Ltd., Hong Kong
fYear
2006
fDate
8-12 May 2006
Firstpage
491
Lastpage
491
Abstract
Tunneling magnetoresistive (TMR) head are promising device for high storage density of 100 Gbit/in magnetic recording head. Structure of TMR recording head is different from typical giant magnetoresistive (GMR) spin-valve read head. It is essential to understand the electrostatic discharge (ESD) effect on TMR device behavior and its impacts on device characterization. In this paper, we reported several AlOx TMR device behaviors upon ESD stressing, which are different from GMR head.
Keywords
electrostatic discharge; magnetic heads; magnetic recording; spin valves; tunnelling magnetoresistance; electrostatic discharge; giant magnetoresistive read head; high storage density; magnetic recording head; spin-valve read head; tunneling magnetoresistive recording head; Disk recording; Earth Observing System; Electrostatic discharge; Giant magnetoresistance; Magnetic heads; Magnetic recording; Magnetic sensors; Sensor phenomena and characterization; Threshold voltage; Tunneling magnetoresistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location
San Diego, CA
Print_ISBN
1-4244-1479-2
Type
conf
DOI
10.1109/INTMAG.2006.376215
Filename
4261924
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