Large signal analytical and SPICE model of THz plasmonic FET

Author

Gutin, A. ; Muraviev, A. ; Shur, M. ; Kachorovskii, V. ; Ytterdal, Trond

Author_Institution

Dept. of Electr. & Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2012

fDate

7-9 Aug. 2012

Firstpage

1

Lastpage

5

Abstract

Terahertz detectors using FETs operating in the plasmonic mode have demonstrated high responsivity and low noise. Their design, optimization, and parameter extraction requires accurate models reproducing their response over many orders of magnitude of the THz radiation intensity and ability to account for device-circuit interactions. We have developed a new compact circuit THz SPICE model that allows for the circuit simulation of plasmonic FETs, such as plasmonic detectors with on-chip amplifiers. The THz SPICE model is validated with analytical models and experimentally to show it is in good agreement.

Keywords

SPICE; circuit simulation; field effect transistors; plasmonics; semiconductor device models; terahertz wave detectors; THz plasmonic FET; THz radiation intensity; circuit THz SPICE model; circuit simulation; device-circuit interactions; large signal analytical model; on-chip amplifiers; parameter extraction optimization; plasmonic detectors; plasmonic mode; terahertz detectors; Analytical models; Detectors; FETs; Integrated circuit modeling; Logic gates; Plasmons; SPICE; SPICE; plasmonic detector; terahertz detector;

fLanguage

English

Publisher

ieee

Conference_Titel

Lester Eastman Conference on High Performance Devices (LEC), 2012

Conference_Location

Singapore

Print_ISBN

978-1-4673-2298-0

Electronic_ISBN

978-1-4673-2300-0

Type

conf

DOI

10.1109/lec.2012.6410980

Filename

6410980