DocumentCode
2942367
Title
Early MMIC developments at Texas Instruments
Author
Brehm, Gailon E.
Author_Institution
TriQuint Semiconductor, 500 West Renner Road, Richardson, Texas 75025, USA
fYear
2008
fDate
15-20 June 2008
Firstpage
823
Lastpage
826
Abstract
Early work at Texas Instruments demonstrated and enhanced MMICs based on GaAs MESFET active circuit elements combined with MIM capacitors and microstrip transmission lines formed on a semi-insulating GaAs substrate. This paper reviews those early breakthroughs in processing as demonstrated by novel circuit functions.
Keywords
MIM devices; MMIC; Schottky gate field effect transistors; capacitors; gallium arsenide; microstrip lines; semiconductor materials; GaAs; GaAs MESFET active circuit elements; MIM capacitors; MMIC; Texas Instruments; microstrip transmission lines; semi-insulating substrate; Bridge circuits; Gallium arsenide; Instruments; MESFET integrated circuits; MIM capacitors; MMICs; Microwave integrated circuits; Power transmission lines; Silicon; Substrates; GaAs; MESFET; MMIC; MMICs; integrated circuit; low noise amplifier; module; monolithic microwave; phase shifter; power amplifier; transmit/receive;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location
Atlanta, GA
ISSN
0149-645X
Print_ISBN
978-1-4244-1780-3
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2008.4632959
Filename
4632959
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