Early GaAs FET monolithic microwave integrated circuit developments for radar applications at Plessey, UK

Author

Pengelly, Raymond S.

Author_Institution

Cree Inc., Research Triangle Park, North Carolina, 27709 U.S.A.

fYear

2008

fDate

15-20 June 2008

Firstpage

827

Lastpage

830

Abstract

The early development of GaAs FET monolithic microwave integrated circuits (MMICs) for phased array radar applications at Plessey in the UK over the period of 1975 through 1989 is described. Following the introduction of a basic GaAs MMIC fabrication process in the early 1970psilas at Plessey Central Research Laboratories (Caswell) and the characterization of distributed and lumped element components at Plessey Applied Research Laboratories (Roke Manor) a complete range of MMICs were designed and fabricated to be used in fully integrated transmit/receive modules in S-band.

Keywords

MMIC; gallium arsenide; low noise amplifiers; microwave field effect transistors; phased array radar; power amplifiers; semiconductor materials; FET monolithic microwave integrated circuit; GaAs; MMIC; Plessey Central Research Laboratories; S-band; integrated transmit-receive modules; low noise amplifier; phased array radar applications; power amplifier; Application specific integrated circuits; FET integrated circuits; Gallium arsenide; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Monolithic integrated circuits; Phased arrays; Radar applications; GaAs MMIC; Low noise amplifier; hybrid circuits; module; monolithic microwave integrated circuits; phase shifter; power amplifier; transmit/receive switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2008 IEEE MTT-S International

Conference_Location

Atlanta, GA

ISSN

0149-645X

Print_ISBN

978-1-4244-1780-3

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2008.4632960

Filename

4632960