Title :
Comparison of AC I-V characteristic of Si and SiC MOSFETs
Author :
Naik, H. ; Chow, T.P.
Author_Institution :
Centre for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A physical model for the AC I-V characteristics of high voltage MOS based power devices is presented here. A closed form expression is derived to predict the AC I-V characteristics based on the knowledge of widely used C-V measurement method used to characterize MOS interfaces. This model is then used to compare commercial Si and SiC high voltage power MOSFETs.
Keywords :
elemental semiconductors; power MOSFET; silicon; silicon compounds; AC I-V characteristic; C-V measurement method; MOS interface characterization; SiC; high-voltage MOS-based power devices; silicon carbide high-voltage power MOSFET; Capacitance-voltage characteristics; Current measurement; MOSFETs; Semiconductor device measurement; Silicon carbide; Threshold voltage; Voltage measurement; AC I–V measurement; C-V measurement; MOSFETs; SiC; flatband voltage; threshold voltage;
Conference_Titel :
Lester Eastman Conference on High Performance Devices (LEC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2298-0
Electronic_ISBN :
978-1-4673-2300-0
DOI :
10.1109/lec.2012.6410984
